Illuminant : 360nm-780nm Xenon lamp, 400/420/460nm cut-off360nm-780nm Xenon lamp, 400 nm cut-off360nm-780nm Combined LED Lamp, 400nm cut-off, 420nm cut-off, UV Lamp360nm-780nm Combined LED Lamp, 400nm cut-offD65,A,C,D50,D55,D75,F1,F2(CWF),F3,F4,F5,F6,F7(DLF),F8,F9,F10(TPL5),F11(TL84),F12(TL83/U30)D65,A,C,D50,D55,D75,F1,F2(CWF),F3,F4,F5,F6,F7(DLF),F8,F9,F10(TPL5),F11(TL84),F12(TL83/U30)D65,A,C,D50,D55,D75,F1,F2(CWF),F3,F4,F5,F6,F7(DLF),F8,F9,F10(TPL5), F11(TL84),F12(TL83/U30)D65,A,C,D50,F2(CWF),F7(DLF), F10(TPL5),F11(TL84),F12(TL83/U30)D65,A,C,D50,D55,D75,F1,F2(CWF),F3,F4,F5,F6,F7(DLF),F8,F9,F10(TPLS), F11(TL84),F12(TL83/U30)
- Illuminant: 360nm-780nm Xenon lamp, 400/420/460nm cut-off
- Sensor: 256 Image Element Double Array CMOS I mage Sensor, Concave-grating
- Wavelength Pitch: 10 nm
- Semiband Width: 5 nm
- Reflectance Range: 0-200%
- Illuminant: 360nm-780nm Xenon lamp, 400 nm cut-off
- Sensor: 256 Image Element Double Array CMOS I mage Sensor, Concave-grating
- Wavelength Pitch: 10 nm
- Semiband Width: 10 nm
- Reflectance Range: 0-200%
- Illuminant: 360nm-780nm Combined LED Lamp, 400nm cut-off, 420nm cut-off, UV Lamp
- Sensor: 256 Image Element Double Array CMOS Image Sensor
- Wavelength Pitch: 10 nm
- Semiband Width: 10 nm
- Reflectance Range: 0-200%
- Illuminant: 360nm-780nm Combined LED Lamp, 400nm cut-off
- Sensor: 256 Image Element Double Array CMOS Image Sensor
- Wavelength Pitch: 10 nm
- Semiband Width: 10 nm
- Reflectance Range: 0-200%
- Illuminant: D65,A,C,D50,D55,D75,F1,F2(CWF),F3,F4,F5,F6,F7(DLF),F8,F9,F10(TPL5),F11(TL84),F12(TL83/U30)
- Sensor: 256 Image Element Double Array CMOS Image Sensor
- Light Source Device: 360nm-780nm Combined LED Lamp, UV Lamp
- Spectroscopic Method: Concave-grating
- Spectral Range: 400-700nm/10nm Output
- Illuminant: D65,A,C,D50,D55,D75,F1,F2(CWF),F3,F4,F5,F6,F7(DLF),F8,F9,F10(TPL5),F11(TL84),F12(TL83/U30)
- Sensor: 256 Image Element Double Array CMOS Image Sensor
- Light Source Device: 360nm -780nm Combined LED Lamp
- Spectroscopic Method: Concave-grating
- Spectral Range: 400-700nm/10nm Output
- Illuminant: D65,A,C,D50,D55,D75,F1,F2(CWF),F3,F4,F5,F6,F7(DLF),F8,F9,F10(TPL5), F11(TL84),F12(TL83/U30)
- Sensor: Silicon photodiode array (40 groups)
- Wavelength Pitch: 10 nm
- Semiband Width: 10 nm
- Spectral Range: 400-700nm
- Illuminant: D65,A,C,D50,F2(CWF),F7(DLF), F10(TPL5),F11(TL84),F12(TL83/U30)
- Sensor: Silicon photodiode array (40 groups)
- Wavelength Pitch: 10 nm
- Semiband Width: 10 nm
- Spectral Range: 400-700nm
- Illuminant: D65,A,C,D50,D55,D75,F1,F2(CWF),F3,F4,F5,F6,F7(DLF),F8,F9,F10(TPLS), F11(TL84),F12(TL83/U30)
- Sensor: 256 Image Element Double Array CMOS Image Sensor
- Wavelength Pitch: 10 nm
- Semiband Width: 10 nm
- Spectral Range: 400-700nm